Image | Mfr.Part# | Manufacturer | Description | MOQ/MPQ/PKG | Priceing | Quantity |
![]() |
BAS1603WE6327HTSA1 | Infineon Technologies | BAS1603WE6327HTSA1|^|80V 4.5A 4ns 1μA 250mA 独立式 SOD 贴片安装 1.25mm*1.7mm*900μm |
|
|
|
![]() |
BAS1603WE6327HTSA1 | Infineon Technologies | BAS1603WE6327HTSA1|^|80V 4.5A 4ns 1μA 250mA 独立式 SOD 贴片安装 1.25mm*1.7mm*900μm |
|
|
|
![]() |
BSS670S2LH6327XTSA1 | Infineon Technologies | BSS670S2LH6327XTSA1|^|Infineon N沟道增强型MOS管 OptiMOS系列, Vds=55 V, 540 mA, SOT-23封装, 表面贴装, 3引脚 |
|
|
|
![]() |
2DIB1411FXUMA1 | Infineon Technologies | 2DIB1411FXUMA1|^|40 1 SOIC-8 |
|
|
|
![]() |
BSP613PH6327XTSA1 | Infineon Technologies | BSP613PH6327XTSA1|^|Infineon P沟道增强型MOS管 SIPMOS系列, Vds=60 V, 2.9 A, SOT-223封装, 表面贴装, 3引脚 |
|
|
|
![]() |
IRFR9024NTRPBF | Infineon Technologies | IRFR9024NTRPBF|^|Infineon P沟道增强型MOS管 HEXFET系列, Vds=55 V, 11 A, DPAK (TO-252)封装, 表面贴装, 3引脚 |
|
|
|
![]() |
BFP650H6327 | Infineon Technologies | Infineon Technologies BFP650H6327|^|4V 500mW 100@70mA,3V 150mA NPN SOT-343-4 Bipolar (BJT) ROHS |
|
|
|
![]() |
6EDL04N02PRXUMA1 | Infineon Technologies | 6EDL04N02PRXUMA1|^|英飞凌 28引脚MOSFET驱动器, 17.5V电源, PG-DSO封装 |
|
|
|
![]() |
IRFR9024NTRPBF | Infineon Technologies | IRFR9024NTRPBF|^|Infineon P沟道增强型MOS管 HEXFET系列, Vds=55 V, 11 A, DPAK (TO-252)封装, 表面贴装, 3引脚 |
|
|
|
![]() |
IRFR3710ZTRPBF | Infineon Technologies | IRFR3710ZTRPBF|^|Infineon N沟道MOS管, Vds=100 V, 42 A, DPAK封装, 印刷电路板 |
|
|
|
![]() |
IRFR3710ZTRPBF | Infineon Technologies | IRFR3710ZTRPBF|^|Infineon N沟道MOS管, Vds=100 V, 42 A, DPAK封装, 印刷电路板 |
|
|
|
![]() |
2EDB8259FXUMA1 | Infineon Technologies | 2EDB8259FXUMA1|^|批号: 22+ 数量: 105000 Driver 9A 2-OUT High Side/Low Side Half Brdg Non-Inv 16-Pin DSO N T/R |
|
|
|
![]() |
IRF7103TRPBF | Infineon Technologies | IRF7103TRPBF|^|Infineon N沟道增强型MOS管 HEXFET系列, Vds=50 V, 3 A, SOIC封装, 表面贴装, 8引脚 |
|
|
|
![]() |
IRF540NPBF | Infineon Technologies | IRF540NPBF|^|Infineon N沟道增强型MOS管 HEXFET系列, Vds=100 V, 33 A, TO-220AB封装, 通孔安装, 3引脚 |
|
|
|
![]() |
IRF7105TRPBF | Infineon Technologies | IRF7105TRPBF|^|Infineon N/P沟道增强型MOS管 HEXFET系列, Vds=25 V, 2.3 A,3.5 A, SOIC封装, 表面贴装, 8引脚 |
|
|
|
![]() |
IRLZ34NSTRLPBF | Infineon Technologies | IRLZ34NSTRLPBF|^|Infineon N沟道增强型MOS管 HEXFET系列, Vds=55 V, 30 A, D2PAK (TO-263)封装, 表面贴装, 3引脚 |
|
|
|
![]() |
1EDI60H12AHXUMA1 | Infineon Technologies | 1EDI60H12AHXUMA1|^|10ns 1 13V 35V|17V 9ns 反相,非反相 SOP 贴片安装,黏合安装 6.4mm(长度) |
|
|
|
![]() |
SPB17N80C3ATMA1 | Infineon Technologies | SPB17N80C3ATMA1|^|227W(Tc) 20V 3.9V@1mA 177nC@ 10 V 1个N沟道 800V 290mΩ@ 11A,10V 17A 2.3nF@100V 1000,D2PAK 贴片安装 10mm*9.25mm*4.4mm |
|
|
|
![]() |
ISP762TFUMA1 | Infineon Technologies | ISP762TFUMA1|^|高端 SOP 贴片安装,黏合安装 5mm*4mm*1.5mm |
|
|
|
![]() |
ISP762TFUMA1 | Infineon Technologies | ISP762TFUMA1|^|高端 SOP 贴片安装,黏合安装 5mm*4mm*1.5mm |
|
|
|